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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 7N40 description drain current i d = 7a@ t c =25 drain source voltage- : v dss = 400v(min) fast switching speed applications general purpose power amplifier absolute maximum ratings(t c =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 7 a i d(puls) pulse drain current 15 a p tot total dissipation@t c =25 100 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.25 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 7N40 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d =1ma 400 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2.0 4.0 v v sd diode forward on-voltage i s =3.5a ;v gs = 0 1.4 v r ds( on ) drain-source on-resistance v gs = 10v; i d =3.5a 0.75 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 400v; v gs = 0 20 a c iss input capacitance v ds =25v; v gs =0v; f t =1mhz 3300 pf c rss reverse transfer capacitance 80 c oss output capacitance 530 t r rise time v gs =10v; i d =3.5a; v dd =200v; r l =50 75 ns t d(on) turn-on delay time 45 t f fall time 100 t d(off) turn-off delay time 250 pdf pdffactory pro www.fineprint.cn |
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